#Littelfuse Inc, #S2008V, #IGBT_Module, #IGBT, S2008V Silicon Controlled Rectifier, 8A I(T)RMS, 5100mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, VPAK-3; S2008
Manufacturer Part Number: S2008VRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: LITTELFUSE INCPart Package Code: TO-251Package Description: IN-LINE, R-PSIP-T3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: Littelfuse IncRisk Rank: 5.09Additional Feature: HIGH RELIABILITYCase Connection: ANODEConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 250 V/usDC Gate Trigger Current-Max: 15 mADC Gate Trigger Voltage-Max: 1.5 VHolding Current-Max: 30 mAJEDEC-95 Code: TO-251JESD-30 Code: R-PSIP-T3JESD-609 Code: e3Leakage Current-Max: 0.5 mAMoisture Sensitivity Level: 2Non-Repetitive Pk On-state Cur: 100 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 5100 AOperating Temperature-Max: 125 °COperating Temperature-Min: -65 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Qualification Status: Not QualifiedRMS On-state Current-Max: 8 ARepetitive Peak Off-state Voltage: 200 VRepetitive Peak Reverse Voltage: 200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Silicon Controlled Rectifier, 8A I(T)RMS, 5100mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, VPAK-3