#ON Semiconductor, #SBE813_TL_E, #IGBT_Module, #IGBT, SBE813-TL-E Schottky Barrier Diode, 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode, SOT-28FL / VEC8, 3000-REEL
Manufacturer Part Number: SBE813-TL-EBrand Name: ON SemiconductorPbfree Code: Lifetime BuyIhs Manufacturer: ON SEMICONDUCTORPin Count: 8Manufacturer Package Code: 318AHECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.53Additional Feature: HIGH RELIABILITY, LOW LEAKAGE CURRENTApplication: GENERAL PURPOSEConfiguration: SEPARATE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.52 VJESD-30 Code: R-PDSO-F8JESD-609 Code: e6Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 20 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 8Operating Temperature-Max: 125 °COperating Temperature-Min: -55 °COutput Current-Max: 3 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINERep Pk Reverse Voltage-Max: 30 VReverse Current-Max: 42 µAReverse Recovery Time-Max: 0.02 µsReverse Test Voltage: 15 VSubcategory: Other DiodesSurface Mount: YESTechnology: SCHOTTKYTerminal Finish: Tin/Bismuth (Sn/Bi)Terminal Form: FLATTerminal Position: DUAL Schottky Barrier Diode, 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode, SOT-28FL / VEC8, 3000-REEL