#Microsemi Analog Mixed Signal Group [MIL], #SG2013J_883B, #IGBT_Module, #IGBT, SG2013J-883B Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC
Manufacturer Part Number: SG2013J/883BPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: IN-LINE, R-CDIP-T16ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.33Additional Feature: CMOS COMPATIBLECollector Current-Max (IC): 0.6 ACollector-Emitter Voltage-Max: 50 VConfiguration: COMPLEXJESD-30 Code: R-CDIP-T16JESD-609 Code: e0Number of Elements: 7Number of Terminals: 16Operating Temperature-Max: 150 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNQualification Status: Not QualifiedReference Standard: MIL-STD-883Surface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: DUALTime Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-16