#Infineon Technologies, #SGD04N60, #IGBT_Module, #IGBT, SGD04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3; SGD04
Manufacturer Part Number: SGD04N60Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-252AAPackage Description: GREEN, PLASTIC, DPAK-3Pin Count: 3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.67Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 9.4 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEFall Time-Max (tf): 84 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252AAJESD-30 Code: R-PSSO-G2Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 50 WQualification Status: Not QualifiedRise Time-Max (tr): 22 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3