#Vishay Siliconix, #SI2365EDS_T1_GE3, #IGBT_Module, #IGBT, SI2365EDS-T1-GE3 Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semico
Manufacturer Part Number: SI2365EDS-T1-GE3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PDSO-G3ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.68Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 5.9 ADrain Current-Max (ID): 5.9 ADrain-source On Resistance-Max: 0.041 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 1.7 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN