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Vishay Siliconix SI3932DV-T1-GE3 New IGBT Module

#Vishay Siliconix, #SI3932DV_T1_GE3, #IGBT_Module, #IGBT, SI3932DV-T1-GE3 Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semicon

· Categories: IGBT Module
· Manufacturer: Vishay Siliconix
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 145
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SI3932DV-T1-GE3 Specification

Sell SI3932DV-T1-GE3, #Vishay Siliconix #SI3932DV-T1-GE3 New Stock, SI3932DV-T1-GE3 Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6; SI3932DV-T1-GE3, #IGBT_Module, #IGBT, #SI3932DV_T1_GE3
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/si3932dv-t1-ge3.html

Manufacturer Part Number: SI3932DV-T1-GE3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TSOPPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.68Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 3.7 ADrain Current-Max (ID): 3.7 ADrain-source On Resistance-Max: 0.058 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.4 WSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

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