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Vishay Siliconix SI4110DY-T1-GE3 IGBT Module

#Vishay Siliconix, #SI4110DY_T1_GE3, #IGBT_Module, #IGBT, SI4110DY-T1-GE3 Trans MOSFET N-CH 80V 11.7A 8-Pin SOIC N T/R; SI4110DY-T1-GE3

· Categories: IGBT Module
· Manufacturer: Vishay Siliconix
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 10041
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SI4110DY-T1-GE3 Specification

Sell SI4110DY-T1-GE3, #Vishay Siliconix #SI4110DY-T1-GE3 Stock, SI4110DY-T1-GE3 Trans MOSFET N-CH 80V 11.7A 8-Pin SOIC N T/R; SI4110DY-T1-GE3, #IGBT_Module, #IGBT, #SI4110DY_T1_GE3
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/si4110dy-t1-ge3.html

Manufacturer Part Number: SI4110DY-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.83Configuration: SINGLEDS Breakdown Voltage-Min: 80 VDrain Current-Max (Abs) (ID): 17.3 ADrain Current-Max (ID): 1.39 ADrain-source On Resistance-Max: 0.013 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 7.8 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Trans MOSFET N-CH 80V 11.7A 8-Pin SOIC N T/R

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