#Vishay Siliconix, #SI5902BDC_T1_GE3, #IGBT_Module, #IGBT, SI5902BDC-T1-GE3 Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semicond
Manufacturer Part Number: SI5902BDC-T1-GE3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PDSO-C8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 0.86Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 4 ADrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 0.065 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3.12 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: C BENDTerminal Position: DUALTime Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8