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Vishay Siliconix SI5999EDU-T1-GE3 IGBT Module

#Vishay Siliconix, #SI5999EDU_T1_GE3, #IGBT_Module, #IGBT, SI5999EDU-T1-GE3 Trans MOSFET P-CH 20V 5A 8-Pin PowerPAK ChipFET T/R; SI5999EDU-T1-GE3

· Categories: IGBT Module
· Manufacturer: Vishay Siliconix
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 59
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SI5999EDU-T1-GE3 Specification

Sell SI5999EDU-T1-GE3, #Vishay Siliconix #SI5999EDU-T1-GE3 Stock, SI5999EDU-T1-GE3 Trans MOSFET P-CH 20V 5A 8-Pin PowerPAK ChipFET T/R; SI5999EDU-T1-GE3, #IGBT_Module, #IGBT, #SI5999EDU_T1_GE3
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/si5999edu-t1-ge3.html

Manufacturer Part Number: SI5999EDU-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.8Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 6 ADrain Current-Max (ID): 6 ADrain-source On Resistance-Max: 0.059 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 10.4 WPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: C BENDTerminal Position: DUALTime Trans MOSFET P-CH 20V 5A 8-Pin PowerPAK ChipFET T/R

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