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Vishay Siliconix SI7962DP-T1-E3 New IGBT Module

#Vishay Siliconix, #SI7962DP_T1_E3, #IGBT_Module, #IGBT, SI7962DP-T1-E3 Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R; SI7962DP-T1-E3

· Categories: IGBT Module
· Manufacturer: Vishay Siliconix
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2195
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SI7962DP-T1-E3 Specification

Sell SI7962DP-T1-E3, #Vishay Siliconix #SI7962DP-T1-E3 New Stock, SI7962DP-T1-E3 Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R; SI7962DP-T1-E3, #IGBT_Module, #IGBT, #SI7962DP_T1_E3
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Manufacturer Part Number: SI7962DP-T1-E3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.81Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 7.1 ADrain Current-Max (ID): 7.1 ADrain-source On Resistance-Max: 0.017 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3.5 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: C BENDTerminal Position: DUALTime Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R

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