Vishay Siliconix SI7983DP-T1-GE3 IGBT Module

Manufacturer Part Number: SI7983DP-T1-GE3Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-XDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.82Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (ID): 7.7 ADrain-source On Resistance-Max: 0.017 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 30 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: C BENDTerminal Position: DUALTime Power Field-Effect Transistor, 7.7A I(D), 20V, 0.017ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8