#Vishay Siliconix, #SIA419DJ_T1_GE3, #IGBT_Module, #IGBT, SIA419DJ-T1-GE3 MOSFET P-CH 20V 12A SC70-6; SIA419DJ-T1-GE3
Manufacturer Part Number: SIA419DJ-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SC-70Package Description: SMALL OUTLINE, S-XDSO-N3Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.8Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 12 ADrain Current-Max (ID): 8.8 ADrain-source On Resistance-Max: 0.03 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-XDSO-N3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 19 WPulsed Drain Current-Max (IDM): 30 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime MOSFET P-CH 20V 12A SC70-6