#Semikron, #SKM195GB124DN, #IGBT_Module, #IGBT, SKM195GB124DN SKM195GB124DN power transistor module ;
SKM195GB124DN Description Features .Nchannel,homogeneous Silicon structure NPT-IGBT(Non punch through) .Low saturation voltage .Low inductance case .Low tail current with low temperature dependence .High short circuit capability,self limiting to 6*Icnom .Fast & soft inverse CAL diodes .Without hard mould .Large clearance(10mm) and creepage distances(20mm) Typical Applications .Switching(not for linear use) .Switched mode power supplies .DC servo and robot driver .Inverters .DC choppers .AC motor speed control .UPS Uninterruptable power supplies .electronic(also portable) welders Tj=125℃ Vce=600V Vge=±15V Ic=150A Tc=25℃ SKM195GB124DN power transistor module