#SEMIKRON, #SKM200GAR123D, #IGBT_Module, #IGBT, SKM200GAR123D Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D58, SEMITRANS3-7; SKM200GAR
Manufacturer Part Number: SKM200GAR123DPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPart Package Code: DO-204Package Description: FLANGE MOUNT, R-XUFM-X5Pin Count: 2Manufacturer Package Code: CASE D58Manufacturer: SEMIKRONRisk Rank: 5.8Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5JESD-609 Code: e2Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver (Sn/Ag)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D58, SEMITRANS3-7