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Semikron SKM200GB063D,SKM200GB063D pictures,SKM200GB063D supplier,SKM200GB063D stock
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Semikron SKM200GB063D New Power Igbt Transistor , SKM200GB063D pictures, SKM200GB063D price, SKM200GB063D supplier
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not recommended for new design Features: N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat 50 % less turn off losses 30 % less short circuit current Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould Large clearance (13 mm) and creepage distances (20 mm) Typical Applications: Switched mode power supplies AC inverter servo drives UPS uninterruptable power supplies Welding inverters SKM200GB063D 


Power Igbt Transistor

Shunlongwei Inspected every SKM200GB063D before Ship, All SKM200GB063D with 6 months warranty.
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