Semikron SKM200GB125D IGBT Module

SKM200GB125D Features:

.N channel , homogeneous Si

.Low inductance case

.Short tail current with low temperature dependence

.High short circuit capability, self limiting to 6 x I cnom

.Fast & soft inverse CAL diodes

.Isolated copper baseplate using DCB Direct Copper Bonding Technology

.Large clearance (13 mm) and creepage distance (20 mm)

Typical Applications:

.Switched mode power supplies at f sw > 20 kHz

.Resonant inverters up to 100 kHz Inductive heating

.electronic welders at f sw > 20 kHz

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:165A

Collector current Icp:300A

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

IGBT Array & Module Transistor Dual N Channel 200 A 3.3 V 1.2 kV Module.