#SEMIKRON, #SKT513F12DT, #IGBT_Module, #IGBT, SKT513F12DT Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC;
Manufacturer Part Number: SKT513F12DTPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: DISK BUTTON, O-CEDB-N2HTS Code: 8541.30.00.80Manufacturer: SEMIKRONRisk Rank: 5.82Additional Feature: FASTCircuit Commutated Turn-off Time-Nom: 20 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 250 mADC Gate Trigger Voltage-Max: 4 VHolding Current-Max: 400 mAJEDEC-95 Code: TO-200ACJESD-30 Code: O-CEDB-N2Leakage Current-Max: 100 mANon-Repetitive Pk On-state Cur: 11000 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 510000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 1300 ARepetitive Peak Off-state Leakage Current-Max: 100000 µARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: SCR Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC