#SAMSUNG, #SMC7G10US60, #IGBT_Module, #IGBT, SMC7G10US60 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 21PM-AA, 21 PIN; SMC7G10US60
Manufacturer Part Number: SMC7G10US60Part Life Cycle Code: ObsoleteIhs Manufacturer: Fairchild SEMICONDUCTOR CORPPackage Description: FLANGE MOUNT, R-PUFM-P21Pin Count: 21Manufacturer: Fairchild Semiconductor CorporationRisk Rank: 5.84Additional Feature: HIGH SPEED SWITCHINGCollector Current-Max (IC): 10 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-P21Number of Elements: 7Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 36 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 52 nsTurn-on Time-Nom (ton): 10 nsVCEsat-Max: 2.7 V Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 21PM-AA, 21 PIN