#ON Semiconductor, #SMMUN2216LT3G, #IGBT_Module, #IGBT, SMMUN2216LT3G NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL; SMMUN2216LT3G
Manufacturer Part Number: SMMUN2216LT3GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3Manufacturer Package Code: 318-08ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.68Additional Feature: BUILT IN BIAS RESISTORCollector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 160JEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.6 WReference Standard: AEC-Q101Subcategory: BIP General Purpose Small SignalsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL