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Datasheets:MUN(2,5)211, MMUN2211L, DTC114Exx, NSBC114EF3Product Photos:SOT-23-3_527AGStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):10kResistor - Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:230mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SC-59Dynamic Catalog:NPN Pre-biased TransistorsOther Names:SMUN2211T1G-NDSMUN2211T1GOSTR
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Datasheets:MUN(2,5)211, MMUN2211L, DTC114Exx, NSBC114EF3Product Photos:SOT-23-3_527AGStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):10kResistor - Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:230mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SC-59Dynamic Catalog:NPN Pre-biased TransistorsOther Names:SMUN2211T1G-NDSMUN2211T1GOSTR
Shunlongwei Inspected every SMUN2211T1G before Ship, All SMUN2211T1G with 6 months warranty.
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