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ON Semiconductor SMUN5235DW1T1G New IGBT Module

#ON Semiconductor, #SMUN5235DW1T1G, #IGBT_Module, #IGBT, SMUN5235DW1T1G Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SMUN5235DW1T1G

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2173
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SMUN5235DW1T1G Specification

Sell SMUN5235DW1T1G, #ON Semiconductor #SMUN5235DW1T1G New Stock, SMUN5235DW1T1G Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SMUN5235DW1T1G, #IGBT_Module, #IGBT, #SMUN5235DW1T1G
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URL: https://www.slw-ele.com/smun5235dw1t1g.html

Manufacturer Part Number: SMUN5235DW1T1GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6Manufacturer Package Code: 419B-02ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 0.62Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 21.36Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.256 WReference Standard: AEC-Q101Subcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL

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