#Rohm Semiconductor, #SP8K5TB, #IGBT_Module, #IGBT, SP8K5TB Power Field-Effect Transistor, 3.5A I(D), 30V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: SP8K5TBPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 5.17Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 3.5 ADrain Current-Max (ID): 3.5 ADrain-source On Resistance-Max: 0.15 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 14 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin/Copper (Sn/Cu)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 3.5A I(D), 30V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8