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Rohm Semiconductor SP8M10TB New IGBT Module

#Rohm Semiconductor, #SP8M10TB, #IGBT_Module, #IGBT, SP8M10TB Power Field-Effect Transistor, 7A I(D), 30V, 0.037ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide

· Categories: IGBT Module
· Manufacturer: Rohm Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2360
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SP8M10TB Specification

Sell SP8M10TB, #Rohm Semiconductor #SP8M10TB New Stock, SP8M10TB Power Field-Effect Transistor, 7A I(D), 30V, 0.037ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP8, 8 PIN; SP8M10TB, #IGBT_Module, #IGBT, #SP8M10TB
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URL: https://www.slw-ele.com/sp8m10tb.html

Manufacturer Part Number: SP8M10TBPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 5.68Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 7 ADrain Current-Max (ID): 7 ADrain-source On Resistance-Max: 0.037 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 28 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 7A I(D), 30V, 0.037ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP8, 8 PIN

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