#Vishay Siliconix, #SQ2361EES_T1_GE3, #IGBT_Module, #IGBT, SQ2361EES-T1-GE3 Trans MOSFET P-CH 60V 2.5A 3-Pin SOT-23 T/R; SQ2361EES-T1-GE3
Manufacturer Part Number: SQ2361EES-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOT-23Package Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.82Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 2.5 ADrain Current-Max (ID): 2.5 ADrain-source On Resistance-Max: 0.15 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 50 pFJEDEC-95 Code: TO-236JESD-30 Code: R-PDSO-G3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Trans MOSFET P-CH 60V 2.5A 3-Pin SOT-23 T/R