#Vishay Siliconix, #SQJ960EP_T1_GE3, #IGBT_Module, #IGBT, SQJ960EP-T1-GE3 Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: SQJ960EP-T1_GE3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PSSO-G4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.7Avalanche Energy Rating (Eas): 12 mJCase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (ID): 8 ADrain-source On Resistance-Max: 0.04 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSSO-G4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 32 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN