#Vishay Semiconductor Diodes Division, #ST1200C18K0, #IGBT_Module, #IGBT, ST1200C18K0 Silicon Controlled Rectifier, 3080A I(T)RMS, 1700000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, CASE A-2
Manufacturer Part Number: ST1200C18K0Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: CASE A-24, K-PUK-2Pin Count: 2Manufacturer Package Code: CASE A-24HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.07Circuit Commutated Turn-off Time-Nom: 200 µsConfiguration: SINGLEDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJESD-30 Code: O-MEDB-N2Leakage Current-Max: 100 mAMoisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 31000 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 1700000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): 225Qualification Status: Not QualifiedRMS On-state Current-Max: 3080 ARepetitive Peak Off-state Voltage: 1800 VRepetitive Peak Reverse Voltage: 1800 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Silicon Controlled Rectifier, 3080A I(T)RMS, 1700000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, CASE A-24, K-PUK-2