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Vishay Semiconductor Diodes Division ST180S12P0V IGBT Module

#Vishay Semiconductor Diodes Division, #ST180S12P0V, #IGBT_Module, #IGBT, ST180S12P0V Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB,

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 886
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ST180S12P0V Specification

Sell ST180S12P0V, #Vishay Semiconductor Diodes Division #ST180S12P0V Stock, ST180S12P0V Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, METAL, TO-93, 3 PIN; ST180S12P0V, #IGBT_Module, #IGBT, #ST180S12P0V
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/st180s12p0v.html

Manufacturer Part Number: ST180S12P0VRohs Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TO-93Package Description: HERMETIC SEALED, METAL, TO-93, 3 PINPin Count: 3HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.17Circuit Commutated Turn-off Time-Nom: 100 µsConfiguration: SINGLEDC Gate Trigger Current-Max: 150 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJEDEC-95 Code: TO-209ABJESD-30 Code: O-MUPM-H3Leakage Current-Max: 30 mANon-Repetitive Pk On-state Cur: 5000 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 200000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: POST/STUD MOUNTQualification Status: Not QualifiedRMS On-state Current-Max: 314 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: HIGH CURRENT CABLETerminal Position: UPPERTrigger Device Type: SCR Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, METAL, TO-93, 3 PIN

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