Vishay Semiconductor Diodes Division ST330S12P0 IGBT Module

Manufacturer Part Number: ST330S12P0Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TO-118Package Description: HERMETIC SEALED, METAL, TO-118, 3 PINPin Count: 3HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.17Circuit Commutated Turn-off Time-Nom: 100 µsConfiguration: SINGLEDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJEDEC-95 Code: TO-209AEJESD-30 Code: O-MUPM-H3Leakage Current-Max: 50 mAMoisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 9000 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 330000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: POST/STUD MOUNTPeak Reflow Temperature (Cel): 225Qualification Status: Not QualifiedRMS On-state Current-Max: 520 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: HIGH CURRENT CABLETerminal Position: UPPERTime Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN