STMicroelectronics STB16NF06LT4 IGBT Module

Manufacturer Part Number: STB16NF06LT4Brand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 0.62Avalanche Energy Rating (Eas): 127 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 16 ADrain Current-Max (ID): 16 ADrain-source On Resistance-Max: 0.1 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 245Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 45 WPulsed Drain Current-Max (IDM): 64 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: SINGLETime N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET in D2PAK package