#STMicroelectronics, #STPSC8H065CT, #IGBT_Module, #IGBT, STPSC8H065CT 650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode; STPSC8H065CT
Manufacturer Part Number: STPSC8H065CTBrand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPackage Description: R-PSFM-T3ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 2.11Application: POWERConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICON CARBIDEDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.75 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Non-rep Pk Forward Current-Max: 35 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 3Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °COutput Current-Max: 4 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 650 VReverse Current-Max: 40 µASurface Mount: NOTechnology: SCHOTTKYTerminal Form: THROUGH-HOLETerminal Position: SINGLETime 650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode