#, #T4771N26TOF, #IGBT_Module, #IGBT, T4771N26TOF Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element; T4771N2
Manufacturer Part Number: T4771N26TOFPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGHTS Code: 8541.30.00.80Manufacturer: Infineon Technologies AGRisk Rank: 5.74Circuit Commutated Turn-off Time-Nom: 250 µsCritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 350 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 350 mALeakage Current-Max: 200 mANon-Repetitive Pk On-state Cur: 95000 AOn-State Voltage-Max: 1.14 VOn-state Current-Max: 4770000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CRepetitive Peak Off-state Voltage: 2600 VSubcategory: Silicon Controlled RectifiersTrigger Device Type: SCR Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element