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T4771N28TOF New IGBT Module

#, #T4771N28TOF, #IGBT_Module, #IGBT, T4771N28TOF Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element; T4771N2

· Categories: IGBT Module
· Manufacturer:
· Price: US$
· Date Code: 11+
. Available Qty: 449
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T4771N28TOF Specification

Sell T4771N28TOF, # #T4771N28TOF New Stock, T4771N28TOF Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element; T4771N28TOF, #IGBT_Module, #IGBT, #T4771N28TOF
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/t4771n28tof.html

Manufacturer Part Number: T4771N28TOFPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGHTS Code: 8541.30.00.80Manufacturer: Infineon Technologies AGRisk Rank: 5.16Circuit Commutated Turn-off Time-Nom: 250 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 350 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 350 mAJESD-30 Code: O-CXDB-X4Leakage Current-Max: 200 mANon-Repetitive Pk On-state Cur: 95000 ANumber of Elements: 1Number of Terminals: 4On-state Current-Max: 4770000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 10110 ARepetitive Peak Off-state Voltage: 2800 VRepetitive Peak Reverse Voltage: 2800 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTrigger Device Type: SCR Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element

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