#, #T4771N28TOF, #IGBT_Module, #IGBT, T4771N28TOF Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element; T4771N2
Manufacturer Part Number: T4771N28TOFPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGHTS Code: 8541.30.00.80Manufacturer: Infineon Technologies AGRisk Rank: 5.16Circuit Commutated Turn-off Time-Nom: 250 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 350 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 350 mAJESD-30 Code: O-CXDB-X4Leakage Current-Max: 200 mANon-Repetitive Pk On-state Cur: 95000 ANumber of Elements: 1Number of Terminals: 4On-state Current-Max: 4770000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 10110 ARepetitive Peak Off-state Voltage: 2800 VRepetitive Peak Reverse Voltage: 2800 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTrigger Device Type: SCR Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element