#MITSUBISHI, #TM200CZ_H, #IGBT_Module, #IGBT, TM200CZ-H Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element,; TM200CZ-H
Manufacturer Part Number: TM200CZ-HPbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X8HTS Code: 8541.30.00.80Manufacturer: Mitsubishi ElectricRisk Rank: 5.78Case Connection: ISOLATEDConfiguration: COMMON CATHODE, 2 ELEMENTSDC Gate Trigger Current-Max: 100 mADC Gate Trigger Voltage-Max: 3 VDesc. of Quick-Connects: 2G-2GRDesc. of Screw Terminals: 2A-2CKJESD-30 Code: R-PUFM-X8Leakage Current-Max: 30 mANon-Repetitive Pk On-state Cur: 4000 ANumber of Elements: 2Number of Terminals: 8On-state Current-Max: 200000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 314 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element,