#Rohm Semiconductor, #TT8J2TR, #IGBT_Module, #IGBT, TT8J2TR Power Field-Effect Transistor, 2.5A I(D), 30V, 0.084ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconducto
Manufacturer Part Number: TT8J2TRPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F8Pin Count: 8ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 1.69Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 2.5 ADrain-source On Resistance-Max: 0.084 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F8JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 2.5A I(D), 30V, 0.084ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN