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Panasonic Electronic Components - Semiconductor Products UNR211N00L,UNR211N00L pictures,UNR211N00L supplier,UNR211N00L stock
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Datasheets:UNR211N00L View all SpecificationsProduct Photos:SOT-23-3Catalog Drawings:PNP, NPN Mini TypeStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:Mini3-G1Other Names:UN211N-(TX)UN211N-TXUN211NTRUN211NTR-NDUNR211N00LTR
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Datasheets:UNR211N00L View all SpecificationsProduct Photos:SOT-23-3Catalog Drawings:PNP, NPN Mini TypeStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:Mini3-G1Other Names:UN211N-(TX)UN211N-TXUN211NTRUN211NTR-NDUNR211N00LTR
Shunlongwei Inspected every UNR211N00L before Ship, All UNR211N00L with 6 months warranty.
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