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Panasonic Electronic Components - Semiconductor Products UNR222600L,UNR222600L pictures,UNR222600L supplier,UNR222600L stock
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Datasheets:UNR222600L View all SpecificationsProduct Photos:SOT-23-3Catalog Drawings:PNP, NPN Mini TypeStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):600mAVoltage - Collector Emitter Breakdown (Max):20VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):-DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 10VVce Saturation (Max) @ Ib, Ic:80mV @ 2.5mA, 50mACurrent - Collector Cutoff (Max):-Frequency - Transition:200MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:Mini3-G1Other Names:UN2226-(TX)UNR222600LTR
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Datasheets:UNR222600L View all SpecificationsProduct Photos:SOT-23-3Catalog Drawings:PNP, NPN Mini TypeStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):600mAVoltage - Collector Emitter Breakdown (Max):20VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):-DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 10VVce Saturation (Max) @ Ib, Ic:80mV @ 2.5mA, 50mACurrent - Collector Cutoff (Max):-Frequency - Transition:200MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:Mini3-G1Other Names:UN2226-(TX)UNR222600LTR
Shunlongwei Inspected every UNR222600L before Ship, All UNR222600L with 6 months warranty.
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