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Panasonic Electronic Components - Semiconductor Products UNR411800A,UNR411800A pictures,UNR411800A supplier,UNR411800A stock
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Datasheets:UNR411800A View all SpecificationsProduct Photos:NS-B1Catalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):510Resistor - Emitter Base (R2) (Ohms):5.1kDC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:300mWMounting Type:Through HolePackage / Case:NS-B1Supplier Device Package:NS-B1Other Names:UNR411800ATB
Sell Panasonic Electronic Components - Semiconductor Products UNR411800A New Stock, UNR411800A pictures, UNR411800A price, UNR411800A supplier
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Datasheets:UNR411800A View all SpecificationsProduct Photos:NS-B1Catalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):510Resistor - Emitter Base (R2) (Ohms):5.1kDC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:300mWMounting Type:Through HolePackage / Case:NS-B1Supplier Device Package:NS-B1Other Names:UNR411800ATB
Shunlongwei Inspected every UNR411800A before Ship, All UNR411800A with 6 months warranty.
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