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Panasonic Electronic Components - Semiconductor Products UNR411H00A,UNR411H00A pictures,UNR411H00A supplier,UNR411H00A stock
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Datasheets:UNR411H00A View all SpecificationsProduct Photos:NS-B1Catalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):2.2kResistor - Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:300mWMounting Type:Through HolePackage / Case:NS-B1Supplier Device Package:NS-B1Other Names:UNR411H00ATB
Sell Panasonic Electronic Components - Semiconductor Products UNR411H00A New Stock, UNR411H00A pictures, UNR411H00A price, UNR411H00A supplier
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Datasheets:UNR411H00A View all SpecificationsProduct Photos:NS-B1Catalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):2.2kResistor - Emitter Base (R2) (Ohms):10kDC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:300mWMounting Type:Through HolePackage / Case:NS-B1Supplier Device Package:NS-B1Other Names:UNR411H00ATB
Shunlongwei Inspected every UNR411H00A before Ship, All UNR411H00A with 6 months warranty.
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