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Panasonic Electronic Components - Semiconductor Products UNR412200A,UNR412200A pictures,UNR412200A supplier,UNR412200A stock
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Datasheets:UNR412200A View all SpecificationsCatalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):500mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 100mACurrent - Collector Cutoff (Max):1µAFrequency - Transition:200MHzPower - Max:300mWMounting Type:Through HolePackage / Case:3-SIPSupplier Device Package:NS-B1Other Names:UNR412200ATB
Sell Panasonic Electronic Components - Semiconductor Products UNR412200A New Stock, UNR412200A pictures, UNR412200A price, UNR412200A supplier
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Datasheets:UNR412200A View all SpecificationsCatalog Drawings:NS-B1 Type SideNS-B1 Type FrontStandard Package:5,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Box (TB)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):500mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 100mACurrent - Collector Cutoff (Max):1µAFrequency - Transition:200MHzPower - Max:300mWMounting Type:Through HolePackage / Case:3-SIPSupplier Device Package:NS-B1Other Names:UNR412200ATB
Shunlongwei Inspected every UNR412200A before Ship, All UNR412200A with 6 months warranty.
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