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Panasonic Electronic Components - Semiconductor Products UNR5113G0L,UNR5113G0L pictures,UNR5113G0L supplier,UNR5113G0L stock
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Datasheets:UNR5113G0L View all SpecificationsCatalog Drawings:PNP, NPN S-Mini TypeStandard Package:1Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Digi-Reel®Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):47kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:150mWMounting Type:Surface MountPackage / Case:SC-85Supplier Device Package:SMini3-F2Other Names:UNR5113G0LDKR
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Datasheets:UNR5113G0L View all SpecificationsCatalog Drawings:PNP, NPN S-Mini TypeStandard Package:1Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Digi-Reel®Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):47kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:80MHzPower - Max:150mWMounting Type:Surface MountPackage / Case:SC-85Supplier Device Package:SMini3-F2Other Names:UNR5113G0LDKR
Shunlongwei Inspected every UNR5113G0L before Ship, All UNR5113G0L with 6 months warranty.
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