#Microsemi Power Products Group, #VRF150, #IGBT_Module, #IGBT, VRF150 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconduc
Manufacturer Part Number: VRF150Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, O-CRFM-F4ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 2.12Configuration: SINGLEDS Breakdown Voltage-Min: 170 VDrain Current-Max (ID): 16 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: O-CRFM-F4JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: TIN SILVER COPPERTerminal Form: FLATTerminal Position: RADIALTime RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, ROHS COMPLIANT, M174, SOE, 4 PIN