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Vishay Semiconductor Diodes Division VS-GA250SA60S IGBT Module

#Vishay Semiconductor Diodes Division, #VS_GA250SA60S, #IGBT_Module, #IGBT, VS-GA250SA60S Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4; VS-GA250

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 419
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VS-GA250SA60S Specification

Sell VS-GA250SA60S, #Vishay Semiconductor Diodes Division #VS-GA250SA60S Stock, VS-GA250SA60S Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4; VS-GA250SA60S, #IGBT_Module, #IGBT, #VS_GA250SA60S
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vs-ga250sa60s.html

Manufacturer Part Number: VS-GA250SA60SPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: FLANGE MOUNT, R-PUFM-X4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.72Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 400 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELSurface Mount: NOTerminal Finish: NICKEL (197)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4

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