Vishay Semiconductor Diodes Division VS-HFA08TB120STRLP IGBT Module

Manufacturer Part Number: VS-HFA08TB120STRLPPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: R-PSSO-G2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.67Additional Feature: LOW NOISEApplication: EFFICIENCYCase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 4.3 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 130 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 4 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Power Dissipation-Max: 73.5 WReference Standard: AEC-Q101Rep Pk Reverse Voltage-Max: 1200 VReverse Current-Max: 10 µAReverse Recovery Time-Max: 0.095 µsSurface Mount: YESTerminal Finish: MATTE TIN OVER NICKELTerminal Form: GULL WINGTerminal Position: SINGLETime Rectifier Diode, 1 Phase, 2 Element, 4A, 1200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2