Vishay Semiconductor Diodes Division VS-HFA08TB120STRRP IGBT Module

Manufacturer Part Number: VS-HFA08TB120STRRPBFPart Life Cycle Code: TransferredIhs Manufacturer: VISHAY SEMICONDUCTORSPackage Description: R-PSSO-G2HTS Code: 8541.10.00.80Manufacturer: Vishay SemiconductorsRisk Rank: 5.36Additional Feature: LOW NOISE, PD-CASEApplication: EFFICIENCYCase Connection: CATHODEConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 4.3 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2Non-rep Pk Forward Current-Max: 130 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 8 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPower Dissipation-Max: 73.5 WReference Standard: AEC-Q101Rep Pk Reverse Voltage-Max: 1200 VReverse Current-Max: 10 µAReverse Recovery Time-Max: 0.095 µsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLE Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2