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Vishay Semiconductor Diodes Division VS-SD1100C04C IGBT Module

#Vishay Semiconductor Diodes Division, #VS_SD1100C04C, #IGBT_Module, #IGBT, VS-SD1100C04C Rectifier Diode, 1 Phase, 1 Element, 1400A, 400V V(RRM), Silicon,; VS-SD1100C04C

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2061
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VS-SD1100C04C Specification

Sell VS-SD1100C04C, #Vishay Semiconductor Diodes Division #VS-SD1100C04C Stock, VS-SD1100C04C Rectifier Diode, 1 Phase, 1 Element, 1400A, 400V V(RRM), Silicon,; VS-SD1100C04C, #IGBT_Module, #IGBT, #VS_SD1100C04C
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vs-sd1100c04c.html

Manufacturer Part Number: VS-SD1100C04CRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 2.31Application: HIGH VOLTAGE HIGH POWERConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.31 VJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 13600 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 180 °COperating Temperature-Min: -40 °COutput Current-Max: 1400 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 400 VReverse Current-Max: 35000 µASurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Rectifier Diode, 1 Phase, 1 Element, 1400A, 400V V(RRM), Silicon,

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