#Vishay Semiconductor Diodes Division, #VS_SD823C12S30C, #IGBT_Module, #IGBT, VS-SD823C12S30C Rectifier Diode, 1 Phase, 1 Element, 910A, 1200V V(RRM), Silicon,; VS-SD823C12S30C
Manufacturer Part Number: VS-SD823C12S30CRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.72Additional Feature: FREE WHEELING DIODE, SNUBBER DIODEApplication: FAST SOFT RECOVERYConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.85 VJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 10050 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -40 °COutput Current-Max: 910 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONRep Pk Reverse Voltage-Max: 1200 VReverse Current-Max: 50000 µAReverse Recovery Time-Max: 3 µsSurface Mount: YESTerminal Form: NO LEADTerminal Position: END Rectifier Diode, 1 Phase, 1 Element, 910A, 1200V V(RRM), Silicon,