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Vishay Semiconductor Diodes Division VS-SD853C45S50K IGBT Module

#Vishay Semiconductor Diodes Division, #VS_SD853C45S50K, #IGBT_Module, #IGBT, VS-SD853C45S50K Rectifier Diode, 1 Phase, 1 Element, 990A, 4500V V(RRM), Silicon, DO-200AC,; VS-SD853C45S50K

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1339
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VS-SD853C45S50K Specification

Sell VS-SD853C45S50K, #Vishay Semiconductor Diodes Division #VS-SD853C45S50K Stock, VS-SD853C45S50K Rectifier Diode, 1 Phase, 1 Element, 990A, 4500V V(RRM), Silicon, DO-200AC,; VS-SD853C45S50K, #IGBT_Module, #IGBT, #VS_SD853C45S50K
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vs-sd853c45s50k.html

Manufacturer Part Number: VS-SD853C45S50KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.76Additional Feature: FREE WHEELING DIODE, SNUBBER DIODEApplication: HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERYConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 2.9 VJEDEC-95 Code: DO-200ACJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 19900 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 125 °COperating Temperature-Min: -40 °COutput Current-Max: 990 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 4500 VReverse Current-Max: 100000 µAReverse Recovery Time-Max: 5 µsSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Rectifier Diode, 1 Phase, 1 Element, 990A, 4500V V(RRM), Silicon, DO-200AC,

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