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VISHAY T70HFL20S02 New IGBT Module

#VISHAY, #T70HFL20S02, #IGBT_Module, #IGBT, Vishay Semiconductors Fast Recovery Diodes (T-Modules), 70 A

· Categories: IGBT Module
· Manufacturer: VISHAY
· Price: US$
· Date Code: 2022+
. Available Qty: 619
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T70HFL20S02 Specification

Sell T70HFL20S02, #VISHAY #T70HFL20S02 New Stock, Vishay Semiconductors Fast Recovery Diodes (T-Modules), 70 A, #IGBT_Module, #IGBT, #T70HFL20S02
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/t70hfl20s02.html

Vishay T70HFL20S02 is a high current density surface-mount schottky rectifier designed for use in power supplies, converters, and other high-current applications. It maximum voltage rating 200V, maximum forward current rating 70A, and maximum forward voltage drop of 0.61V at 35A.

This T70HFL20S02 schottky rectifier features planar construction for optimal thermal performance, low forward voltage drop, and high surge capability.

The T70HFL20S02 comes in TO-277A package, which is surface-mount package with low profile and small footprint.

#T70HFL20S02 FEATURES

• Fast recovery time characteristics

• Electrically isolated base plate

isolating voltage

• Standard JEDEC package

• Simplified mechanical

designs, rapid assembly

• Large creepage distances

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified

for industrial level

DESCRIPTION

The series of T-Modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact as semblies to be built.

These single diode Modules can be used in conjunction with the thyristor Modules as a freewheel diode. Application includes self-commutated inve rters, DC choppers, motor control, inductive heating and Electronic welders. These modules are intended for those applications where very fast recovery characteristics are quired and for general power switching applications

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1730V

Gate-Emitter voltage VGES:±20V

Collector current Ic:35A

Collector current Icp:70A

Collector power dissipation Pc:530W

Collector-Emitter voltage VCES:3500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Weight 54 g

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