#IXYS, #VVZ110_12IO7, #IGBT_Module, #IGBT, VVZ110-12IO7 Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-8;
Manufacturer Part Number: VVZ110-12IO7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-8Pin Count: 8HTS Code: 8541.30.00.80Manufacturer: IXYS CorporationRisk Rank: 5.68Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: 3 PHASE BRIDGE, HALF-CONTROLLED, COMMON CATHODECritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 100 mADC Gate Trigger Voltage-Max: 1.5 VDesc. of Quick-Connects: 3GDesc. of Screw Terminals: 3AK-CA-CKHolding Current-Max: 200 mAJESD-30 Code: R-XUFM-X8Leakage Current-Max: 5 mANon-Repetitive Pk On-state Cur: 1200 ANumber of Elements: 3Number of Terminals: 8On-state Current-Max: 110000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 58 ARepetitive Peak Off-state Leakage Current-Max: 300 µARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-8