#Diodes Inc, #ZXT11N15DFTC, #IGBT_Module, #IGBT, ZXT11N15DFTC Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT4, 3 PIN; ZXT11N15
Manufacturer Part Number: ZXT11N15DFTCRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.38Collector Current-Max (IC): 3 ACollector-Emitter Voltage-Max: 15 VConfiguration: SINGLEDC Current Gain-Min (hFE): 150JESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.806 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 145 MHz Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT4, 3 PIN